All-nitride and In-free Al$_x$Ga$_{1-x}$N:Mn/GaN distributed Bragg reflectors for the near-infrared

TL;DR

This paper presents the design, growth, and characterization of all-nitride, In-free AlGaN:Mn/GaN distributed Bragg reflectors that enhance near-infrared optoelectronic device performance.

Contribution

It introduces a comprehensive protocol for creating efficient all-nitride NIR reflectors using AlGaN:Mn/GaN, advancing near-infrared device technology.

Findings

Demonstrated effective NIR distributed Bragg reflectors with AlGaN:Mn/GaN.

Showed compatibility with GaN:(Mn,Mg) layers for telecommunication applications.

Validated the design and growth process through detailed characterization.

Abstract

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride and In-free efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop Al$_x$Ga$_{1-x}$N:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mg$_{k}$ complexes optically active in the telecommunication range of wavelengths.