Engineering quantum spin Hall insulators by strained-layer heterostructures
Takafumi Akiho, Fran\c{c}ois Cou\"edo, Hiroshi Irie, Kyoichi Suzuki,, Koji Onomitsu, Koji Muraki

TL;DR
This paper demonstrates that applying strain to InAs/InGaSb heterostructures enhances their topological and spin properties, making them promising candidates for robust quantum spin Hall insulators with potential spintronics applications.
Contribution
It introduces strained-layer heterostructures as a new approach to realize and tune quantum spin Hall insulators with improved bulk resistivity and spin-orbit effects.
Findings
High bulk resistivity in strained heterostructures
Enhanced Rashba spin-orbit splitting due to strain
Fermi level crossing only one spin branch over a wide density range
Abstract
Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band structures, and have been proposed as a platform for exploring spintronics applications and exotic quasiparticles related to the spin-helical edge modes. Despite theoretical proposals for various materials, however, experimental demonstrations of QSHIs have so far been limited to two systems--HgTe/CdTe and InAs/GaSb--both of which are lattice-matched semiconductor heterostructures. Here we report transport measurements in yet another realization of a band-inverted heterostructure as a QSHI candidate--InAs/InGaSb with lattice mismatch. We show that the compressive strain in the InGaSb layer enhances the band overlap and energy…
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