Dressed photon-orbital states in a quantum dot: Inter-valley spin resonance
P. Scarlino, E. Kawakami, T. Jullien, D. R. Ward, D. E. Savage, M. G., Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, and L. M. K., Vandersypen

TL;DR
This paper investigates microwave-induced transitions in silicon quantum dots, revealing complex dressed states, inter-valley spin transitions, and non-linear effects that impact qubit coherence and control.
Contribution
It introduces the concept of dressed photon-orbital states to unify understanding of multiple microwave resonances, including novel inter-valley spin transitions and non-linear phenomena.
Findings
Observation of six microwave resonance lines in Si/SiGe quantum dots.
Identification of inter-valley spin transitions with enhanced electric field sensitivity.
Detection of a dynamical anti-crossing caused by system non-linearity.
Abstract
The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces transitions between both valley-orbit and spin states. We show that this system is highly nonlinear and can be understood through the use of dressed photon-orbital states, enabling a unified understanding of the six microwave resonance lines we observe. Some of these resonances are inter-valley spin transitions that arise from a non-adiabatic process in which both the valley and the spin degree of freedom are excited simultaneously. For these transitions, involving a change in valley-orbit state,…
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