Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si

TL;DR

This paper explores the molecular beam epitaxy process for growing InAs nanowires within SiO2 nanotube templates, addressing growth challenges and potential for integrating III-V semiconductors on silicon for advanced electronic applications.

Contribution

It demonstrates the conditions for successful InAs nanowire growth in nanotube templates and presents a model to understand the growth mechanism, advancing integration techniques.

Findings

Optimal nanotube dimensions for high-yield growth identified

In-assisted vapor-liquid-solid growth enables nanowire initiation

Model supports experimental observations of growth conditions

Abstract

Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires on SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.