Manipulating antiferromagnets with magnetic fields: ratchet motion of multiple domain walls induced by asymmetric field pulses

TL;DR

This paper introduces a novel method for manipulating antiferromagnetic domain walls using asymmetric magnetic field pulses, enabling controlled ratchet motion that is broadly applicable and efficient for spintronic device development.

Contribution

The study proposes using asymmetric magnetic field pulses to induce controlled ratchet motion of AF domain walls, overcoming limitations of static fields and spin-orbit torque methods.

Findings

Asymmetric field pulses enable synchronous motion of multiple domain walls.

The approach achieves higher domain wall mobility compared to static fields.

Controlled ratchet motion prevents backward movement, allowing precise manipulation.

Abstract

Future applications of antiferromagnets (AFs) in many spintronics devices rely on the precise manipulation of domain walls. The conventional approach using static magnetic fields is inefficient due to the low susceptibility of AFs. Recently proposed electrical manipulation with spin-orbit torques is restricted to metals with a specific crystal structure. Here we propose an alternative, broadly applicable approach: using asymmetric magnetic field pulses to induce controlled ratchet motion of AF domain walls. The efficiency of this approach is based on three peculiarities of AF dynamics. First, a time-dependent magnetic field couples with an AF order parameter stronger than a static magnetic field, which leads to higher mobility of the domain walls. Second, the rate of change of the magnetic field couples with the spatial variation of the AF order parameter inside the domain and this enables synchronous motion of multiple domain walls with the same structure. Third, tailored asymmetric field pulses in combination with static friction can prevent backward motion of domain walls and thus lead to the desired controlled ratchet effect. The proposed use of an external field, rather than internal spin-orbit torques, avoids any restrictions on size, conductivity, and crystal structure of the AF material. We believe that our approach paves a way for the development of new AF-based devices based on controlled motion of AF domain walls.