Ion Beam radiation and temperature effect on Co/Si and CoO/Co/Si thin films

TL;DR

This study investigates how ion beam irradiation and temperature influence the magnetic properties of Co/Si and CoO/Co/Si multilayer thin films, revealing effects of ion energy and fluence.

Contribution

It provides new insights into the effects of ion beam parameters on the magnetic properties of multilayer thin films.

Findings

Ion irradiation modifies magnetic properties significantly.

Different ion energies and fluences produce distinct magnetic responses.

Temperature effects further influence magnetic behavior.

Abstract

Co and CoO thin films were deposited by magnetron sputtering in the form of multilayers. They were irradiated with Ar and Si ion beams of different energies and fluences. The magnetic properties were investigated.