Enhancing the thermoelectric performance of a HfS2 monolayer through valley engineering

TL;DR

This study demonstrates that applying biaxial strain to HfS2 monolayers enhances their thermoelectric performance by valley engineering, significantly increasing the ZT value, especially for p-type doping.

Contribution

It introduces strain-induced valley engineering as a method to substantially improve the thermoelectric efficiency of HfS2 monolayers.

Findings

Tensile strain increases the degeneracy of band valleys.

Strain enhances the Seebeck coefficient and power factor.

ZT value for p-type doping reaches 3.67 at 6% strain.

Abstract

The electronic, phonon, and thermoelectric properties of a two-dimensional HfS2 monolayer are investigated by using the first-principles calculations combined with the Boltzmann transport theory. The band valleys of the HfS2 monolayer can be effectively tuned by the applied biaxial strain. The Seebeck coefficient and therefore the peak value of the power factor (with the relaxation time inserted) increase when the degeneracy of the band valleys is increased by the strain. When no strain is applied, the HfS2 monolayer is an excellent n-type thermoelectric material, while the thermoelectric performance of the p-type doped one is poor. The applied tensile strain of 6% can increase the room-temperature ZT value of the p-type doped system to 3.67, which is five times larger than that of the unstrained one. The much more balanced ZT values of the p- and n-type doping are favorable for fabrication of both p- and n-legs of thermoelectric modules. Our results indicate that the thermoelectric performance of the HfS2 monolayer can be greatly improved by the valley engineering through the method of strain.