Self-Directed Channel Memristor for High Temperature Operation

TL;DR

This paper introduces a high-temperature tolerant memristor made from layered chalcogenide materials that is simple to fabricate, fast in switching, and highly durable, suitable for advanced memory applications.

Contribution

The development of a self-directed channel memristor that operates reliably at high temperatures without complex fabrication processes.

Findings

Operates continuously at at least 150°C

Fast switching response in the nanosecond range

Cycling lifetime exceeds 1 billion cycles

Abstract

Ion-conducting memristors comprised of the layered chalcogenide materials Ge2Se3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can be classified as a generic memristor and can tolerate continuous high temperature operation (at least 150 {\deg}C). Unlike other chalcogenide-based ion conducting device types, the SDC does not require complicated fabrication steps, such as photodoping or thermal annealing, making these devices faster and more reliable to fabricate. Device pulsed response shows fast state switching in the 10E-9 s range. Device cycling at both room temperature and 140 {\deg}C show cycling lifetimes of at least 1 billion.