Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction

TL;DR

This paper reports a scalable chemical vapor deposition method for growing bilayer WS2 on graphene and h-BN, enabling all-2D optoelectronic devices with preserved polarization and patterned photoconductive features.

Contribution

It introduces a scalable CVD process for WS2 on 2D materials and demonstrates polarization conservation and patterning capabilities.

Findings

Bilayer WS2 films grown on graphene and h-BN.

74% polarization retention at room temperature.

Scalable patterning of photoconductive and photoemitting structures.

Abstract

By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagonal boron nitride (h-BN) via a chemical vapor deposition (CVD) approach. Spectroscopic and microscopic analysis reveal that the film is bilayer-thick, with local monolayer inclusions. Photoluminescence measurements show a remarkable conservation of polarization at room temperature peaking 74% for the entire WS2 film. Furthermore, we present a scalable bottom-up approach for the design of photoconductive and photoemitting patterns.