The Generalized Metastable Switch Memristor Model
Timothy W. Molter, M. Alexander Nugent
TL;DR
This paper introduces the Generalized Metastable Switch (MSS) memristor model, combining stochastic and diode components, to enable accurate, efficient, and versatile memristor device simulations for circuit design.
Contribution
The paper presents a new, comprehensive memristor model that is easy to implement, computationally efficient, and adaptable to various memristor devices.
Findings
Model incorporates voltage-dependent stochastic and diode components
Designed for ease of implementation and computational efficiency
Applicable to a wide range of memristor devices
Abstract
Memristor device modeling is currently a heavily researched topic and is becoming ever more important as memristor devices make their way into CMOS circuit designs, necessitating accurate and efficient memristor circuit simulations. In this paper, the Generalized Metastable Switch (MSS) memristor model is presented. The Generalized MSS model consists of a voltage-dependent stochastic component and a voltage-dependent exponential diode current component and is designed to be easy to implement, computationally efficient, and amenable to modeling a wide range of different memristor devices.
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Neural dynamics and brain function · stochastic dynamics and bifurcation