Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures
B. A. Gray, S. Middey, G. Conti, A. X. Gray, C.-T. Kuo, A. M. Kaiser,, S. Ueda, K. Kobayashi, D. Meyers, M. Kareev, I. C. Tung, Jian Liu, C. S., Fadley, J. Chakhalian, and J. W. Freeland

TL;DR
This study demonstrates a superconductor-to-Mott insulator transition in YBa₂Cu₃O₇/LaCaMnO₃ heterostructures driven by interfacial charge transfer, revealing new insights into electronic doping effects without chemical substitution.
Contribution
The paper introduces a novel interfacial charge transfer method to induce a superconductor-to-Mott insulator transition in cuprate heterostructures, avoiding chemical doping.
Findings
Transition from superconducting to Mott insulating state with increased LCMO layer thickness.
Charge transfer involves not only transition metals but also rare-earth and alkaline-earth ions.
Electronic doping controls $T_c$ without chemical substitution effects.
Abstract
The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high superconductor YBaCuO (YBCO) and colossal magnetoresistance ferromagnet LaCaMnO (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier doping in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness.…
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