Influence of excitonic effects on luminescence quantum yield in silicon

TL;DR

This paper investigates how excitonic effects influence the internal luminescence quantum yield in silicon by analyzing nonradiative and radiative exciton lifetimes and their impact on luminescence efficiency at room temperature.

Contribution

It provides a quantitative analysis of excitonic effects on silicon's luminescence quantum yield, identifying conditions where these effects enhance luminescence efficiency.

Findings

Identified a range of Shockley-Hall-Reed lifetimes where excitonic effects increase quantum yield.

Quantified the influence of excitonic effects on luminescence efficiency at room temperature.

Compared experimental and theoretical charge carrier lifetimes to analyze excitonic contributions.

Abstract

Nonradiative exciton lifetime in silicon is determined by comparison of the experimental and theoretical curves of bulk minority charge carriers lifetime on doping and excitation levels. This value is used to analyze the influence of excitonic effects on internal luminescence quantum yield at room temperature, taking into account both nonradiative and radiative exciton lifetimes. A range of Shockley-Hall-Reed lifetimes is found, where excitonic effects lead to an increase of internal luminescence quantum yield.