Temperature dependence of the spin Hall angle and switching current in the nc-W(O)/CoFeB/MgO system with perpendicular magnetic anisotropy

TL;DR

This study examines how temperature affects the switching current in a specific magnetic system, finding that the spin Hall angle remains constant while the switching current increases at lower temperatures, highlighting material stability for device applications.

Contribution

It demonstrates that nc-W(O) maintains a stable spin Hall angle across temperatures and is resistant to annealing, making it suitable for spintronic device integration.

Findings

Spin Hall angle is approximately 0.22 and temperature-independent.

Switching current increases significantly at low temperatures.

nc-W(O) is resistant to annealing effects.

Abstract

We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle $|\Theta_\mathrm{SH}| \approx 0.22$ is independent of temperature, whereas the switching current increases strongly at low temperature. We show that the nc-W(O) is insensitive to annealing. It thus can be a good choice for the integration of spin Hall driven writing of information in magnetic memory or logic devices that require a high-temperature annealing process during fabrication.