Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices

TL;DR

This paper reports high-quality CVD-grown monolayer MoS2 with transport properties comparable to exfoliated samples, demonstrating high current density and discussing future improvements for electronics applications.

Contribution

It provides the first comprehensive analysis of electrical transport in CVD-grown monolayer MoS2 with practical device performance metrics.

Findings

Monolayer MoS2 exhibits mobility of ~20 cm2/V/s at 300 K on SiO2.

Achieved record high current density of ~270 μA/μm at 300 K.

Simulations identify key improvements needed for future device applications.

Abstract

We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K). Transfer length measurements reveal monolayer mobility of ~20 cm2/V/s on SiO2 substrates at 300 K and practical carrier densities (>2x10^12 1/cm^2). We also demonstrate the highest current density reported to date (~270 uA/um or 44 MA/cm^2) at 300 K for an 80 nm device from CVD-grown monolayer MoS2. Using simulations, we discuss what improvements of monolayer MoS2 are still required to meet technology roadmap requirements for low power (LP) and high performance (HP) applications. Such results are an important step towards large-area electronics based on monolayer semiconductors.