A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure
Ji-yuan Zheng, Lai Wang, Di Yang, Jia-dong Yu, Xiao Meng, Yan-xiong E,, Chao Wu, Zhi-biao Hao, Chang-zheng Sun, Bing Xiong, Yi Luo, Yan-jian Han,, Jian Wang, Hong-tao Li, Julien Brault, Samuel Matta, Mohamed Al Khalfioui,, Jian-chang Yan, Tong-bo Wei, Yun Zhang, Jun-xi Wang

TL;DR
This paper presents a GaN/AlN-based high-gain avalanche photodiode that operates without breakdown, achieving high gain and stable detection under constant bias, potentially replacing traditional photomultiplier tubes.
Contribution
The work introduces a novel GaN/AlN periodical stacked structure enabling high gain avalanche photodiodes to operate without breakdown, simplifying system design and enhancing stability.
Findings
Achieved a high gain of 10^4 in the prototype device.
Demonstrated stable gain under constant bias without breakdown.
Provided new insights into avalanche multiplication mechanisms.
Abstract
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. The complexity of system seriously restricts the application. Here, we demonstrate an avalanche photodiode holding high gain without breakdown, which means no quenching circuit is needed for sustainable detection. The device is…
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