Enhanced thermoelectric performance in thin films of three-dimensional topological insulators

TL;DR

This study demonstrates that thin films of three-dimensional topological insulators, specifically Bi2Se3, exhibit enhanced thermoelectric performance due to surface state properties, with potential improvements through defect engineering.

Contribution

It provides first-principle calculations and analysis showing how topological surface states improve thermoelectric efficiency in Bi2Se3 thin films, and suggests defect introduction as a further enhancement method.

Findings

Relaxation time of surface states is much larger than bulk states.

High TE figure of merit near conduction band edge.

Defect introduction improves TE performance, especially at room temperature.

Abstract

Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological insulator and the emerging nanotechnology open a new way to design high-performance TE devices. In this paper, we investigate the TE transport properties of the Bi2Se3 thin film by the first-principle calculations and the Boltzmann transport theory. By comparing our calculations with the earlier experimental data, we demonstrate that, for the Bi2Se3 film of thickness larger than six quintuple layers, the relaxation time of the topological surface states in the bulk gap is about hundreds of femtoseconds, which is about two orders larger than that of the bulk states. Such a large relaxation-time difference causes the ratio of the electrical conductance to the thermal conductance much larger than the value predicted by the Wiedemann-Franz law, as well as the large magnitude of Seebeck coefficient, and consequently the large TE figure of merit, when the Fermi level is near the conduction band edge. We shows that the TE performance can be further improved by introducing defects in the middle layers of the thin film. The improvement is generally significant at room temperature and can be further enhanced at higher temperature.