Weak Localization and Electron-electron Interactions in Few Layer Black Phosphorus Devices

TL;DR

This study investigates electron-electron interactions in few-layer black phosphorus devices using magnetotransport measurements, revealing their dominant role in scattering and dephasing processes at low temperatures.

Contribution

It provides the first detailed analysis of electron-electron interactions as the main scattering mechanism in encapsulated FLP devices through weak localization measurements.

Findings

Electron-electron interactions dominate scattering in FLP.

Dephasing length varies from 30 to 100 nm at low temperatures.

Dephasing length depends strongly on carrier density and temperature.

Abstract

Few layer phosphorene(FLP) devices are extensively studied due to its unique electronic properties and potential applications on nano-electronics . Here we present magnetotransport studies which reveal electron-electron interactions as the dominant scattering mechanism in hexagonal boron nitride-encapsulated FLP devices. From weak localization measurements, we estimate the electron dephasing length to be 30 to 100 nm at low temperatures, which exhibits a strong dependence on carrier density n and a power-law dependence on temperature (~T-0.4). These results establish that the dominant scattering mechanism in FLP is electron-electron interactions.