The Nature of Electron Transport and visible light absorption in Strontium Niobate -- A Plasmonic Water Splitter
Dongyang Wan, Yongliang Zhao, Yao Cai, Teguh Citra Asmara, Zhen Huang,, Jianqiang Chen, Jindui Hong, Christopher T. Nelson, Mallikarjuna Rao, Motapothula, Bixing Yan, Rong Xu, Haimei Zheng, Ariando, Andrivo Rusydi,, Andrew Minor, Mark B. H. Breese, Mark Asta, Qinghua Xu

TL;DR
This study reveals that visible light absorption in strontium niobate thin films is due to bulk plasmon resonance from high carrier density, enhancing charge carrier lifetime and potentially improving water splitting efficiency.
Contribution
The paper demonstrates that visible light absorption in Sr$_{0.94}$NbO$_{3+{ extdelta}}$ is caused by bulk plasmon resonance, not interband transitions, and links this to improved water splitting performance.
Findings
Carrier density reaches 10^22 cm^-3, close to metals.
Visible light absorption at 1.8 eV is due to plasmon resonance.
Charge carrier lifetime is significantly enhanced by plasmon decay.
Abstract
Semiconductor compounds are widely used for water splitting applications, where photo-generated electron-hole pairs are exploited to induce catalysis. Recently, powders of a metallic oxide (SrNbO, 0.03 < x < 0.20) have shown competitive photocatalytic efficiency, opening up the material space available for finding optimizing performance in water-splitting applications. The origin of the visible light absorption in these powders was reported to be due to an interband transition and the charge carrier separation was proposed to be due to the high carrier mobility of this material. In the current work we have prepared epitaxial thin films of SrNbO and found that the bandgap of this material is ~4.1 eV, which is very large. Surprisingly the carrier density of the conducting phase reaches 10 cm, which is only one order smaller than that of…
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