Evolution of Landau levels in graphene-based topological insulators in the presence of wedge disclinations

TL;DR

This paper investigates how wedge disclinations and magnetic fields affect the Landau levels in graphene-based topological insulators using the Kane-Mele model, providing exact solutions and analyzing defect influences.

Contribution

It presents an exact solution for Landau levels in a topological insulator with topological defects, extending understanding of defect effects on electronic properties.

Findings

Wedge disclinations modify the Landau level spectrum.

Magnetic fields influence the evolution of Landau levels.

Exact solutions for Landau levels in defected topological insulators are obtained.

Abstract

In this paper we consider modification of electronic properties of graphene-based topological insulator in the presence of wedge disclination and magnetic field by adopting the Kane-Mele model with intrinsic spin-orbit coupling. Using the properly defined Dirac-Weyl equation for this system, an exact solution for the Landau levels is obtained. The influence of the topological defect on the evolution of Landau levels is discussed.