Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

TL;DR

This paper investigates the electronic structure of YSb, a non-magnetic semimetal exhibiting extreme magnetoresistance, revealing that its XMR arises from electron-hole mobility differences and moderate carrier compensation, not topological protection.

Contribution

It provides spectroscopic evidence that YSb's XMR is due to electron-hole mobility differences and carrier compensation, challenging the common topological protection explanation.

Findings

YSb lacks topological protection and perfect electron-hole compensation.

A significant difference in electron and hole mobility contributes to XMR.

Moderate carrier compensation also plays a role in the observed XMR.

Abstract

An extreme magnetoresistance (XMR) has recently been observed in several non-magnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.