Interface-driven topological Hall effect in SrRuO$_3$-SrIrO$_3$ bilayer
J. Matsuno, N. Ogawa, K. Yasuda, F. Kagawa, W. Koshibae, N. Nagaosa,, Y. Tokura, M. Kawasaki

TL;DR
This study demonstrates the emergence of a topological Hall effect in SrRuO$_3$-SrIrO$_3$ bilayers, driven by interface Dzyaloshinskii-Moriya interaction, which can be tuned by layer thickness and has implications for topological electronics.
Contribution
It reveals the interface-driven topological Hall effect in oxide bilayers and links it to Dzyaloshinskii-Moriya interaction and skyrmion formation, advancing understanding of topological phenomena in oxide interfaces.
Findings
Topological Hall effect observed in SrRuO$_3$-SrIrO$_3$ bilayers.
Effect diminishes with SrRuO$_3$ thickness, disappearing at 7 unit cells.
Interface Dzyaloshinskii-Moriya interaction induces Nel-type skyrmions.
Abstract
Electron transport coupled with magnetism has attracted attention over the years as exemplified in anomalous Hall effect due to a Berry phase in momentum space. Another type of unconventional Hall effect -- topological Hall effect, originating from the real-space Berry phase, has recently become of great importance in the context of magnetic skyrmions. We have observed topological Hall effect in bilayers consisting of ferromagnetic SrRuO and paramagnetic SrIrO over a wide region of both temperature and magnetic field. The topological term rapidly decreases with the thickness of SrRuO, ending up with the complete disappearance at 7 unit cells of SrRuO. Combined with model calculation, we concluded that the topological Hall effect is driven by interface Dzyaloshinskii-Moriya interaction, which is caused by both the broken inversion symmetry and the strong spin-orbit…
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