Measurements of the spin-orbit interaction and Land\'e g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

TL;DR

This study measures the spin-orbit interaction and g factors in a pure-phase InAs nanowire double quantum dot, revealing significant spin-related properties crucial for quantum computing applications.

Contribution

It provides direct measurements of spin-orbit coupling and g factors in a single-crystal InAs nanowire double quantum dot within the Pauli spin-blockade regime, highlighting their potential for quantum technologies.

Findings

Large singlet-triplet energy splitting (~2.3 meV)

Strong spin-orbit interaction (~140 μeV)

Large, level-dependent g factor (~12.5)

Abstract

We demonstrate direct measurements of the spin-orbit interaction and Land\'e g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO$_2$ substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of $\Delta_{ST}\sim 2.3$ meV, a strong spin-orbit interaction of $\Delta_{SO}\sim 140$ $\mu$eV, and a large and strongly level-dependent Land\'e g factor of $\sim 12.5$. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.