Unconventional quantum Hall effect in Floquet topological insulators
M. Tahir, P. Vasilopoulos, and U. Schwingenschlog

TL;DR
This paper explores an unconventional quantum Hall effect in Floquet topological insulators, revealing a novel Hall state with half-integer quantization of Hall conductivity induced by photon dressing and polarization reversal.
Contribution
It demonstrates a new quantum Hall state in Floquet topological insulators where the zeroth Landau level transitions to a Hall insulator with half-integer quantization, influenced by light polarization.
Findings
Discovery of a Hall insulator state with σ_{yx}=e^2/2h
Reversal of light polarization exchanges surface states
Potential for observing half-integer quantum Hall plateaux
Abstract
We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the light's polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity at zero Fermi energy, to a Hall insulator state with . These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaux at .
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