Photovoltaic anomalous Hall effect in line-node semimetals

TL;DR

This paper theoretically investigates how circularly polarized light induces a photovoltaic anomalous Hall effect in line-node semimetals, revealing Fermi level-dependent Hall conductivity with potential applications in phototransistors.

Contribution

It demonstrates the emergence of a photovoltaic anomalous Hall effect in line-node semimetals under circularly polarized light, highlighting the Fermi level sensitivity of Hall conductivity.

Findings

Hall conductivity depends on Fermi level position.

Hall conductivity is nearly independent of light intensity at the node.

Potential applications in phototransistor technology.

Abstract

We theoretically study the circularly polarized light-induced Floquet state in line-node semimetals with time-reversal symmetry and inversion symmetry. It is found that the Floquet state can show the photovoltaic anomalous Hall effect when an applied circularly polarized light gaps out the line node in the bulk and leave Weyl point nodes. The Hall conductivity is sensitive to the location of Fermi level: When the Fermi level locates at the node, the Hall conductivity depends on the radius of line node and is nearly independent of the intensity of light. Away from the line node, the Hall conductivity is dependent on the intensity of light. Such a sensitive Fermi-level dependence of the Hall conductivity in the presence of a weak laser intensity can have applications in phototransistors based on thin films of line-node semimetals.