Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping

TL;DR

This paper demonstrates a chemical doping method using F4-TCNQ to significantly improve black phosphorus FET performance, achieving record high drain current and mobility, though the enhancement is temporary.

Contribution

Introduces a novel chemical doping technique with F4-TCNQ that enhances black phosphorus FET performance temporarily, with record high drain current and mobility.

Findings

Achieved low ON-state resistance of 3.2 ohm.mm

Reached high field-effect mobility of 229 cm2/Vs

Recorded drain current of 532 mA/mm

Abstract

In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an initial period of 18 h, before degrading to previously reported levels. By applying 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), low ON-state resistance of 3.2 ohm.mm and high field-effect mobility of 229 cm2/Vs are achieved with a record high drain current of 532 mA/mm at a moderate channel length of 1.5 {\mu}m.