Tunable Electronic Properties of Multilayer Phosphorene and Its Nanoribbons

TL;DR

This paper investigates how a vertical electric field influences the electronic properties of multilayer phosphorene and nanoribbons, revealing a transition from massive to massless Dirac fermions and proposing a dual-edge-gate quantum switch device.

Contribution

It demonstrates the electric field-induced transition in band structure and introduces a novel dual-edge-gate phosphorene nanoribbon device for quantum switching.

Findings

Band gap closes at a critical electric field $E_c$

Transition from massive to massless Dirac fermions observed

Proposed dual-edge-gate nanoribbon as a quantum switch

Abstract

We study the effects of a vertical electric field on the electronic band structure and transport in multilayer phosphorene and its nanoribbons. In phosphorene, at a critical value of the vertical electric field ($E_c$), the band gap closes and the band structure undergoes a massive-to-massless Dirac fermion transition along the armchair direction. This transition is observable in quantum Hall measurements, as the power-law dependence of the Landau-level energy on the magnetic field $B$ goes from $\sim (n+1/2)B$ below $E_c$, to $\sim [(n+1/2)B]^{2/3}$ at $E_c$, to $\sim [(n+1/2)B]^{1/2}$ above $E_c$. In multilayer phosphorene nanoribbons (PNRs), the vertical electric field can be employed to manipulate the midgap energy bands that are associated with edge states, thereby giving rise to new device functionalities. We propose a dual-edge-gate PNR structure that works as a quantum switch.