Modeling of Reduced Effective Secondary Electron Emission Yield from a Velvet Surface

TL;DR

This paper models how velvet-like surface structures can significantly reduce secondary electron emission, providing analytical and numerical tools to optimize surface design for electron suppression.

Contribution

It introduces a new analytical model and numerical simulations to predict secondary electron yield from velvet surfaces based on geometric parameters.

Findings

Velvet surfaces can reduce secondary electron yield by up to 90%.

A condition involving velvet geometry and electron incidence angle determines suppression effectiveness.

Optimal velvet packing density depends on aspect ratio and incident electron angle.

Abstract

Complex structures on a material surface can significantly reduce total secondary electron emission from that surface. A velvet is a surface that consists of an array of vertically standing whiskers. The reduction occurs due to the capture of low-energy, true secondary electrons emitted at the bottom of the structure and on the sides of the velvet whiskers. We performed numerical simulations and developed an approximate analytical model that calculates the net secondary electron emission yield from a velvet surface as a function of the velvet whisker length and packing density, and the angle of incidence of primary electrons. We found that to suppress secondary electrons, the following condition on dimensionless parameters must be met: {\pi}/2 DA tan {\theta} >> 1 where {\theta} is the angle of incidence of the primary electron from the normal, D is the fraction of surface area taken up by the velvet whisker bases, and A is the aspect ratio, A {\equiv} h/r, the ratio of height to radius of the velvet whiskers. We find that velvets available today can reduce the secondary electron yield by 90% from the value of a flat surface. The values of optimal velvet whisker packing density that maximally suppresses secondary electron emission yield are determined as a function of velvet aspect ratio and electron angle of incidence.