A comparative study on defect estimation using XPS and Raman spectroscopy in few layer nanographitic structures

TL;DR

This study compares Raman spectroscopy and XPS for defect estimation in nanographitic structures, finding XPS provides more accurate surface defect analysis and discussing the nuances of both techniques.

Contribution

It offers a comparative analysis of Raman and XPS techniques for defect estimation in nanographitic structures, highlighting the superior accuracy of XPS.

Findings

XPS provides more accurate surface defect estimation than Raman.

Raman reveals vacancy and boundary defects in different NGS orientations.

Both techniques show excellent correlation in defect assessment.

Abstract

Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) has been investigated using Raman and X-ray photoelectron spectroscopy. While Raman spectra reveal the dominance of vacancy and boundary type defects respectively in vertical and planar NGSs, XPS provides additional information on vacancy related defect peaks at C 1s spectrum that originate from non-conjugated carbon atoms in hexagonal lattice. Although an excellent correlation prevails between these two techniques, our results show that estimation of surface defects by XPS is more accurate than Raman analysis. Nuances of these techniques are discussed in the context of assessing defects in nanographitic structures.