Critical behavior in the presence of an order-parameter pinning field
Francesco Parisen Toldin, Fakher F. Assaad, and Stefan Wessel

TL;DR
This study investigates quantum critical phenomena using a pinning-field approach in a 2D quantum Heisenberg model and an improved classical 3D Ising model, revealing complex scaling behaviors and universal critical exponents.
Contribution
It demonstrates the effectiveness of the pinning-field method in locating quantum critical points and uncovers new universal critical exponents at the critical adsorption fixed point.
Findings
Pinning-field approach locates quantum critical points across various strengths.
Strong corrections to scaling complicate critical behavior identification.
Discovery of a new universal critical exponent at the critical adsorption fixed point.
Abstract
We apply a recently advocated simulation scheme that employs a local order-parameter pinning field to study quantum critical phenomena in the two-dimensional square-lattice bilayer quantum Heisenberg model. Using a world-line quantum Monte Carlo approach, we show that for this model, the pinning-field approach allows to locate the quantum critical point over a wide range of pinning-field strengths. However, the identification of the quantum critical scaling behavior is found to be hard since the pinning field introduces strong corrections to scaling. In order to further elucidate the scaling behavior in this situation, we also study an improved classical lattice model in the three-dimensional Ising universality class by means of Monte Carlo simulations on large lattice sizes, which allow us to employ refined finite-size scaling considerations. A renormalization group analysis exhibits…
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