Gate-Variable Mid-Infrared Optical Transitions in a $(Bi_{1-x}Sb_x)_2Te_3$ Topological Insulator

TL;DR

This study demonstrates gate-controlled mid-infrared optical modulation in (Bi1-xSbx)2Te3 topological insulators, combining spectroscopy, transport, and ARPES to reveal tunable spectral weight transfer between bulk and surface states, with potential for infrared optoelectronics.

Contribution

It introduces a novel method for optical modulation in topological insulators via electrostatic gating, supported by a comprehensive model matching experimental data.

Findings

Achieved several percent modulation of transmittance and reflectance.

Identified spectral weight transfer between bulk and surface states.

Developed a permittivity model matching experimental results.

Abstract

We report mid-infrared spectroscopy measurements of an electrostatically gated topological insulator, in which we observe several percent modulation of transmittance and reflectance of (Bi1-xSbx)2Te3 films as gating shifts the Fermi level. Infrared transmittance measurements of gated (Bi1-xSbx)2Te3 films were enabled by use of an epitaxial lift-off method for large-area transfer of topological insulator films from infrared-absorbing SrTiO3 growth substrates to thermal oxidized silicon substrates. We combine these optical experiments with transport measurements and angle-resolved photoemission spectroscopy to identify the observed spectral modulation as a gate-driven transfer of spectral weight between both bulk and topological surface channels and interband and intraband channels. We develop a model for the complex permittivity of gated (Bi1-xSbx)2Te3, and find a good match to our experimental data. These results open the path for layered topological insulator materials as a new candidate for tunable infrared optics and highlight the possibility of switching topological optoelectronic phenomena between bulk and spin-polarized surface regimes.