Resonant optical gating of suspended carbon nanotube transistor

TL;DR

This paper demonstrates a nanoscale transistor using a suspended carbon nanotube controlled by laser-induced radiation pressure, achieving significant conductivity changes and revealing defect states, with potential for scalable logic devices.

Contribution

It introduces a novel optical gating method for carbon nanotube transistors using laser radiation pressure and in-situ Raman spectroscopy, enabling nanoscale control of conductivity.

Findings

Conductivity of CNT changes by over five orders of magnitude.

Self-induced defect states are observed during operation.

The device structure is less than 10 nm in size and scalable.

Abstract

Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube (CNT) using feedback-enabled radiation pressure of a near-field focused laser that enabled significant changes in conductivity of the CNT. Further, using in-situ tip-enhanced Raman spectroscopy, we show that the change in conductivity of over five orders in magnitude is accompanied by self-induced defect states within the CNT. The entire structure is less than 10 nm in dimension and shows promise of scalability. This is a novel method for achieving logic operations at the nanoscale.