Robust spin transfer torque in antiferromagnetic tunnel junctions

TL;DR

This paper theoretically investigates spin transfer torque in antiferromagnetic tunnel junctions, revealing robust out-of-plane and in-plane torques with bias-dependent behaviors, and demonstrates greater disorder resilience compared to metallic spin-valves.

Contribution

It provides a theoretical analysis of spin transfer torque in antiferromagnetic tunnel junctions, highlighting their robustness against disorder and detailed bias dependence of torque components.

Findings

Out-of-plane torque is proportional to ${f n} imes{f p}$.

In-plane torque is proportional to ${f n} imes({f p} imes{f n})$ and mostly linear in bias.

Spin transfer torque in these junctions is more robust against disorder than in metallic spin-valves.

Abstract

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling the electrical manipulation of the N\'eel antiferromagnetic order parameter is out of plane $\sim {\bf n}\times{\bf p}$, while the torque competing with the antiferromagnetic exchange is in-plane $\sim {\bf n}\times({\bf p}\times{\bf n})$. Here, ${\bf { p}}$ and ${\bf { n}}$ are the N\'eel order parameter direction of the reference and free layers, respectively. Their bias dependence shows similar behavior as in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than in antiferromagnetic metallic spin-valves due to the tunneling nature of spin transport.