Photoresponse of atomically thin MoS2 layers and their planar heterojunctions

TL;DR

This study investigates the photoresponse mechanisms of atomically thin MoS2 layers and heterojunctions, revealing how layer properties, polarization, and trapping effects influence device performance for optoelectronic applications.

Contribution

It provides a detailed analysis of the layer-dependent photoresponse and transient behavior in MoS2 devices, highlighting design strategies to improve photodetector speed.

Findings

Peak photoresponse occurs at source junctions in monolayer/bilayer devices.

Polarization sensitivity decreases at monolayer/multi-layer heterojunctions.

Carrier trapping in SiO2 affects transient response, but can be mitigated through device design.

Abstract

MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied with very strong exciton binding energy - resulting in complex photoresponse characteristics. We study the electrical response to scanning photo-excitation on MoS2 monolayer (1L) and bilayer (2L) devices, and also on monolayer/bilayer (1L/2L) planar heterojunction and monolayer/few-layer/multi-layer (1L/FL/ML) planar double heterojunction devices to unveil the intrinsic mechanisms responsible for photocurrent generation in these materials and junctions. Strong photoresponse modulation is obtained by scanning the position of the laser spot, as a consequence of controlling the relative dominance of a number of layer dependent properties, including (i) photoelectric effect (PE), (ii) photothermoelectric effect (PTE), (iii) excitonic effect, (iv) hot photo-electron injection from metal, and (v) carrier recombination. The monolayer and bilayer devices show peak photoresponse when the laser is focused at the source junction, while the peak position shifts to the monolayer/multi-layer junction in the heterostructure devices. The photoresponse is found to be dependent on the incoming light polarization when the source junction is illuminated, although the polarization sensitivity drastically reduces at the monolayer/multi-layer heterojunction. Finally, we investigate laser position dependent transient response of photocurrent to reveal trapping of carriers in SiO2 at the source junction is the critical factor to determine the transient response in 2D photodetectors, and also show that, by systematic device design, such trapping can be avoided in the heterojunction devices, resulting in fast transient response. The insights obtained will play an important role in designing fast 2D TMDs based photodetector and related optoelectronic and thermoelectric devices.