Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction

TL;DR

This paper demonstrates Pauli spin blockade in a CMOS-fabricated double quantum dot with holes, highlighting the impact of strong spin-orbit interaction and providing insights into hole spin qubit relaxation mechanisms.

Contribution

It presents the first evidence of Pauli blockade in hole-based quantum dots fabricated with standard CMOS technology, advancing the development of hole spin qubits.

Findings

Observation of Pauli spin blockade in hole double quantum dots

Detection of a current dip at zero magnetic field due to strong spin-orbit interaction

Estimated intradot spin relaxation rate of approximately 120 kHz

Abstract

We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz for the first holes, an important step towards a robust hole spin-orbit qubit.