Impurity-driven intervalley spin-flip scattering-induced 2D spin relaxation in silicon

TL;DR

This paper theoretically investigates a dominant impurity-driven intervalley spin-flip scattering mechanism in silicon 2DEGs, revealing its significance over traditional relaxation processes and its potential for experimental testing and spintronic applications.

Contribution

It introduces a new impurity-induced spin relaxation mechanism in silicon 2DEGs, emphasizing its importance and tunability compared to existing models.

Findings

Impurity potential near interfaces causes dominant spin relaxation in silicon 2DEGs.

Yafet spin flip mechanism surpasses Dyakonov-Perel in certain conditions.

The mechanism is testable in Si MOSFETs and SiGe heterostructures.

Abstract

Through the theoretical study of electron spin lifetime in the 2DEG of doped Si, we highlight a dominant spin relaxation mechanism induced by the impurity central-cell potential near an interface via intervalley electron scattering. At low temperatures and with modest doping, this Yafet spin flip mechanism can become much more important than the Dyakonov-Perel spin relaxation indcued by the structural Rashba spin-orbit coupling field. As the leading-order impurity-induced spin flip happens only between two non-opposite valleys in Si, two-dimensional electron gas (2DEG) systems in Si MOSFETs or SiGe heterostructures are a natural platform to test and utilize this spin relaxation mechanism due to the valley splitting near the interface and its tunability by electrical gating or applied stress. Our proposed new spin relaxation mechanism may explain a part of the spin relaxation contribution to Si-based 2DEG systems.