Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides
Fabian Cadiz, Cedric Robert, Gang Wang, Wilson Kong, Xi Fan, Mark, Blei, Delphine Lagarde, Maxime Gay, Marco Manca, Takashi Taniguchi, Kenji, Watanabe, Thierry Amand, Xavier Marie, Pierre Renucci, Sefaattin Tongay, and, Bernhard Urbaszek

TL;DR
This study reveals that 2D molybdenum dichalcogenides undergo irreversible optical property changes even at low laser excitation powers, with effects varying based on substrate and material type, challenging assumptions of non-intrusiveness.
Contribution
It demonstrates that low-power laser excitation causes irreversible doping and optical changes in 2D MoSe2 and MoS2, highlighting substrate-dependent effects and the need for careful laser use in experiments.
Findings
Laser treatment increases trion emission in MoSe2.
Laser exposure can cause irreversible PL peak shifts in MoS2.
Substrate influences laser-induced doping efficiency.
Abstract
The optical response of traditional semiconductors depends on the laser excitation power used in experiments. For two-dimensional (2D) semiconductors, laser excitation effects are anticipated to be vastly different due to complexity added by their ultimate thinness, high surface to volume ratio, and laser-membrane interaction effects. We show in this article that under laser excitation the optical properties of 2D materials undergo irreversible changes. Most surprisingly these effects take place even at low steady state excitation, which is commonly thought to be non-intrusive. In low temperature photoluminescence (PL) we show for monolayer (ML) MoSe2 samples grown by different techniques that laser treatment increases significantly the trion (i.e. charged exciton) contribution to the emission compared to the neutral exciton emission. Comparison between samples exfoliated onto different…
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