Negative and nonlinear magnetoresistance effect in silicon strip

TL;DR

This study reports the observation of negative and nonlinear magnetoresistance in silicon strip detectors at room temperature under high magnetic fields, influenced by electric fields, carrier dynamics, and crystal orientation.

Contribution

It reveals the complex interplay of electric fields, magnetic fields, and crystal orientation effects on magnetoresistance in silicon, differing from previous reports.

Findings

Negative magnetoresistance observed at high magnetic fields.

Magnetoresistance exhibits anisotropy based on crystal orientation.

The effects are linked to carrier mobility, Landau levels, and weak localization.

Abstract

Both negative magnetoresistance and nonlinear magnetoresisitance were observed in silicon strip nuclear radiation detector in room temperature if we applied high magnetic field intensity in different direction. This result is different with former report. We believe this is the result of coaction of high electric field (Gunn effect) and high magnetic field, or because of the variation of number of carriers and the carriers mobility. The weak localization and Landau energy levels also affect the magnetoresistance. Different crystal orientations have different energy band structures. Complex band structures lead complex carriers mobility plus Landau energy levels. So the magnetoresisitance effect is anisotropy.