Universal Substrate Effect on the Superconductivity of FeSe Monolayer Films
Slavko Rebec, Tao Jia, Chaofan Zhang, Makoto Hashimoto, Donghui Lu,, Robert Moore, Zhixun Shen

TL;DR
This study investigates the factors influencing high-temperature superconductivity in monolayer FeSe films, demonstrating that interfacial electron-phonon coupling, rather than strain or dielectric effects, plays a key role in enhancing $T_c$.
Contribution
It provides evidence that interfacial electron-phonon coupling is crucial for high $T_c$ in monolayer FeSe, challenging previous assumptions about strain and dielectric effects.
Findings
Superconductivity with $T_c$ of 63 K observed on TiO$_2$ substrate.
Strain and dielectric constant are not primary factors in $T_c$ enhancement.
Electron-phonon coupling at the interface is essential for high $T_c$.
Abstract
To elucidate the mechanisms behind the enhanced in monolayer (1ML) FeSe on SrTiO (STO), we grew highly strained 1ML FeSe on the rectangular (100) face of rutile TiO, and observed the coexistence of replica bands and superconductivity with a of 63 K. From the similar between this system and 1ML FeSe on STO (001), we conclude that strain and dielectric constant are likely unimportant to the enhanced in these systems. A systematic comparison of 1ML FeSe on TiO with other systems in the FeSe family shows that while charge transfer alone can enhance , it is only with the addition of interfacial electron-phonon coupling that can be increased to the level seen in 1ML FeSe on STO.
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