Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

TL;DR

This study explores the electron-hole doping asymmetry in a simple organic Mott insulator, revealing distinct Fermi surface reconstructions and electronic behaviors through combined experimental and theoretical approaches.

Contribution

It provides new insights into doping asymmetry in organic Mott insulators using electric-double-layer transistor measurements and cluster perturbation theory.

Findings

Fermi arc state under hole doping due to anisotropic spectral weight suppression

Non-interacting-like Fermi surface emergence under electron doping

Hall coefficients and resistivity anisotropy match theoretical predictions

Abstract

It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting Fermi surface under electron doping.