Electron and hole doping in the relativistic Mott insulator Sr$_2$IrO$_4$: a first-principles study using band unfolding technique

TL;DR

This study uses first-principles calculations with band unfolding to analyze how La and Rh doping affect the electronic structure and magnetic properties of the relativistic Mott insulator Sr$_2$IrO$_4$, revealing doping-induced metal-insulator transitions and magnetic changes.

Contribution

It provides a detailed first-principles analysis of doping effects on Sr$_2$IrO$_4$ using band unfolding, offering insights into electronic and magnetic transitions beyond rigid band models.

Findings

La doping induces a metal-insulator transition with reduced Coulomb repulsion.

Rh doping causes hole transfer and creates a two-dimensional metallic state.

Hole doping flips the magnetic moment and changes magnetic ordering.

Abstract

We study the effects of dilute La and Rh doping on the electronic structure of the relativistic Mott insulator Sr$_2$IrO$_4$ using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site Hubbard $U$. To model doping effects, we have adopted the supercell approach that allows for a realistic treatment of structural relaxations and electronic effects beyond a purely rigid band approach. By means of the band unfolding technique we have computed the spectral function and constructed the effective band structure and Fermi surface (FS), which are readily comparable with available experimental data. Our calculations clearly indicate that La and Rh doping can be interpreted as effective electron and (fractional) hole doping, respectively. In Sr$_{2-x}$La$_x$IrO$_4$ the IMT is accompanied by a moderate renormalization of the electronic correlation substantiated by a reduction of the effective on-site Coulomb repulsion $U-J$ from 1.6 eV ($x=0$) to 1.4 eV (metallic regime $x=12.5\%$). The progressive closing of the relativistic Mott gap leads to the emergence of connected elliptical electron pockets at ($\pi$/2,$\pi$/2) and less intense features at $X$ in the FS. The substitution of Ir with the nominally isovalent Rh is accompanied by a substantial hole transfer from the Rh site to the nearest neighbor Ir sites. This shifts down the chemical potential, creates almost circular disconnected hole pockets in the FS and establishes the emergence of a two-dimensional metallic state formed by conducting Rh-planes intercalated by insulating Ir-planes. Finally, our data indicate that hole doping causes a flipping of the in-plane net ferromagnetic moment in the Rh plane and induces a magnetic transition from the AF-I to the AF-II ordering.