Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade

TL;DR

This paper presents TCAD simulation results of 3D-Si sensors designed for the ATLAS pixel upgrade, demonstrating their performance under high radiation and at large angles, supporting their suitability for the innermost layer.

Contribution

It provides detailed simulation analysis of non passing-through column 3D-Si sensors for the ATLAS upgrade, including charge collection before and after irradiation.

Findings

Good charge collection under high fluences

Effective performance at large η angles

Suitable for high-luminosity LHC conditions

Abstract

The LHC is expected to reach luminosities up to 3000fb-1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade, shows the charge collection response before and after irradiation, and the response of 3D-Si sensors located at large $\eta$ angles.