Temperature dependence of Er3+ ionoluminescence and photoluminescence in Gd2O3:Bi nanopowder

TL;DR

This study investigates how Er3+ ion luminescence in Gd2O3:Bi nanopowder varies with temperature, establishing a sensitive empirical method to determine temperature changes during ion irradiation and potential applications in temperature monitoring.

Contribution

The paper introduces an empirical formula based on Boltzmann distribution to accurately determine temperature from luminescence spectra in Gd2O3:Bi:Er3+ nanopowder, linking ionoluminescence and photoluminescence data.

Findings

Empirical formula for temperature determination with high sensitivity.

Correlation between IL and PL spectra for temperature measurement.

Potential application in temperature control during ion processes.

Abstract

Ionoluminescence (IL) and photoluminescence (PL) of trivalent erbium ions (Er3+) in Gd2O3 nanopowder host activated with Bi3+ ions has been studied in order to establish the link between changes in luminescent spectra and temperature of the sample material. IL measurements have been performed with H2+ 100 keV ion beam bombarding the target material for a few seconds, while PL spectra have been collected for temperatures ranging from 20 to 700{\deg}C. The PL data was used as a reference in determining the temperature corresponding to IL spectra. The collected data enabled the definition of empirical formula based on the Boltzmann distribution, which allows the temperature to be determined with a maximum sensitivity of 9.7 x 10-3 {\deg}C-1. The analysis of the Er3+ energy level structure in terms of tendency of the system to stay in thermal equilibrium, explained different behaviors of the lines intensities. This work led to the conclusion that temperature changes during ion excitation can be easily defined with separately collected PL spectra. The final result, which is empirical formula describing dependence of fluorescence intensity ratio on temperature, raises the idea of an application of method in temperature control, during processes like ion implantation and some nuclear applications.