Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3
Wen-Kai Huang, Kai-Wen Zhang, Chao-Long Yang, Haifeng Ding, Xiangang, Wan, Shao-Chun Li, James W. Evans, Yong Han

TL;DR
This study demonstrates that local strain induced by defects on Bi2Te3 surfaces can significantly modify Pb adatom mobility, revealing a unique strain-dependent diffusion behavior with implications for interface control in topological insulator films.
Contribution
It introduces a novel strain-dependent diffusion mechanism for Pb on Bi2Te3, combining experimental STM, DFT calculations, and kinetic Monte Carlo simulations to understand adatom behavior.
Findings
Pb adatom mobility is tunable by local strain.
Diffusion barrier E_d shows a cusp-like dependence on strain.
Experimental and simulation results are in good agreement.
Abstract
Heteroepitaxial structures based on BiTe-type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desirable to control the interface structure during film growth on such TIs. In this process, adatom mobility is a key factor. We demonstrate that Pb mobility on the BiTe(111) surface can be modified by the engineering local strain, {\epsilon}, which is induced around the point-like defects intrinsically forming in the BiTe(111) thin film grown on a Si(111)-7 7 substrate. Scanning tunneling microscopy observations of Pb adatom and cluster distributions and first-principles density functional theory (DFT) analyses of the adsorption energy and diffusion barrier E of Pb adatom on BiTe(111) surface show a significant influence of {\epsilon}. Surprisingly, E…
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