Transport mechanism through metal-cobaltite interfaces

TL;DR

This study investigates the temperature-dependent resistive switching mechanisms at Ag/LSCO interfaces, revealing a mixed-phase interface model with Maxwell-Wagner effects that influence dielectric properties.

Contribution

It provides a microscopic model of resistive switching at metal-cobaltite interfaces, incorporating a circuit model with Poole-Frenkel and ohmic elements, and highlights the mixed-phase interface structure.

Findings

Resistive states can be set and measured at room temperature.

IV characteristics are well described by a circuit model with Poole-Frenkel and ohmic resistances.

Interface exhibits mixed conductive and insulating phases affecting dielectric behavior.

Abstract

The resistive switching (RS) properties as a function of temperature were studied for Ag/La$_{1-x}$Sr$_x$CoO$_3$ (LSCO) interfaces. The LSCO is a fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO$_3$ substrate. Both low and a high resistance states were set at room temperature and the temperature dependence of their current-voltage (IV) characteristics was mea- sured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties.