Anisotropic Optical Properties of Layered Germanium Sulfide
Dezhi Tan, Hong En Lim, Feijiu Wang, Nur Baizura Mohamed, Shinichiro, Mouri, Koirala Sandhaya, Wenjing Zhang, Yuhei Miyauchi, Mari Ohfuchi, and, Kazunari Matsuda

TL;DR
This paper investigates the anisotropic optical properties of layered germanium sulfide (GeS), demonstrating polarization-dependent Raman scattering and photoluminescence, supported by theoretical calculations, highlighting its potential for novel physical phenomena and device applications.
Contribution
It provides the first detailed analysis of GeS's anisotropic optical properties, combining experimental Raman and photoluminescence studies with density functional theory.
Findings
Polarized Raman peaks confirm crystal orientation.
Room temperature photoluminescence peak at 1.66 eV observed.
Anisotropic optical transition near the band edge identified.
Abstract
Two-dimensional (2D) layered materials, transition metal dichalcogenides and black phosphorus, have attracted much interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in anisotropic layered 2D materials is a challenging but rewarding frontier, owing to their remarkable optical properties and prospects for new devices. Here, we report the anisotropic optical properties of layered 2D monochalcogenide of germanium sulfide (GeS). Three Raman scattering peaks corresponding to the B3g, A1g, and A2g modes with strong polarization dependence are demonstrated in the GeS flakes, which validates polarized Raman spectroscopy as an effective method for identifying the crystal orientation of anisotropic layered GeS. Photoluminescence (PL) is observed with a peak at around 1.66 eV that originates from the direct optical transition in…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Crystal Structures and Properties · Solid-state spectroscopy and crystallography
