From a quasimolecular band insulator to a relativistic Mott insulator in $t_{2g}^5$ systems with a honeycomb lattice structure
Beom Hyun Kim, Tomonori Shirakawa, and Seiji Yunoki

TL;DR
This paper investigates how electron correlations and spin-orbit coupling influence the electronic phases of $t_{2g}^5$ systems on a honeycomb lattice, revealing a transition from a quasimolecular band insulator to a relativistic Mott insulator.
Contribution
It demonstrates that the quasimolecular orbitals are fragile and that increasing SOC and Coulomb interactions induce a phase transition to a relativistic Mott insulator in $t_{2g}^5$ honeycomb systems.
Findings
Quasimolecular orbitals are destabilized by SOC and Coulomb repulsion.
Transition from band insulator to Mott insulator with increasing interactions.
Current Ru$^{3+}$ and Ir$^{4+}$ systems are relativistic Mott insulators.
Abstract
The orbitals of an edge-shared transition-metal oxide with a honeycomb lattice structure form dispersionless electronic bands when only hopping mediated by the edge-sharing oxygens is accessible. This is due to the formation of isolated quasimolecular orbitals (QMOs) in each hexagon, introduced recently by Mazin et al. [Phys. Rev. Lett. 109, 197201 (2012)], which stabilizes a band insulating phase for systems. However, with help of the exact diagonalization method to treat the electron kinetics and correlations on an equal footing, we find that the QMOs are fragile against not only the spin-orbit coupling (SOC) but also the Coulomb repulsion. We show that the electronic phase of systems can vary from a quasimolecular band insulator to a relativistic Mott insulator with increasing the SOC as well as the Coulomb repulsion. The different…
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