Proposal for a spin MOSFET based on spin gapless semiconductors

TL;DR

This paper proposes a novel spin MOSFET design utilizing spin gapless semiconductors as the channel material, highlighting their potential for high spin polarization and device applications.

Contribution

It introduces a new spin MOSFET architecture based on spin gapless semiconductors, providing an analytical model and discussing its advantages for spintronic devices.

Findings

SGS exhibit complete spin polarization at finite temperature

The proposed device model demonstrates potential for spintronic applications

SGS-based spin MOSFETs offer a new paradigm for spintronics

Abstract

We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of the spin sub-bands and feature complete spin polarization at finite temperature. We present an analytical model of the device and comment the properties relevant for devices applications. Our results boost SGS as a new paradigm for the spin MOSFET concept.