Pauli spin blockade in CMOS double quantum dot devices

TL;DR

This paper demonstrates Pauli spin blockade in CMOS silicon double quantum dots, showing potential for scalable spin qubits with temperature-independent readout, through transport experiments on nanowire transistors from standard CMOS processes.

Contribution

First experimental observation of Pauli spin blockade in CMOS-fabricated silicon quantum dots using nanowire transistors.

Findings

Signatures of Pauli spin blockade with singlet-triplet splitting of 0.3 to 1.3 meV.

Spin-conserving transitions are magnetic-field independent up to 6 T.

Abstract

Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T.