Gate-voltage response of a one-dimensional ballistic spin valve without spin-orbit interaction

TL;DR

This paper demonstrates that engineering tunnel barriers at CNT spin valve interfaces enables significant gate-voltage control of magnetoresistance, even without spin-orbit interaction, through theoretical analysis and analytic expressions.

Contribution

It provides a theoretical framework for gate-tunable TMR in CNT spin valves by modeling interface barriers as Dirac-delta potentials and deriving analytic expressions for various regimes.

Findings

Strong gate-voltage dependence of TMR when electron energy matches barrier potential

Analytic formulas for TMR in different limiting cases

Predictions for device optimization in ballistic transport regime

Abstract

We show that engineering of tunnel barriers forming at the interfaces of a one-dimensional spin valve provides a viable path to a strong gate-voltage tunability of the magnetoresistance effect. In particular, we investigate theoretically a carbon nanotube (CNT) spin valve in terms of the influence of the CNT-contact interface on the performance of the device. The focus is on the strength and the spin selectivity of the tunnel barriers that are modelled as Dirac-delta potentials. The scattering matrix approach is used to derive the transmission coefficient that yields the tunneling magnetoresistance (TMR). We find a strong non-trivial gate-voltage response of the TMR in the absence of spin-orbit coupling when the energy of the incident electrons matches the potential energy of the barrier. Analytic expressions for the TMR in various limiting cases are derived. These are used to explain previous experimental results, but also to predict parameters for device optimization with respect to size and tunability of the TMR effect in the ballistic transport regime.