Manganite-based three level memristive devices with self-healing capability
W. Rom\'an Acevedo, D. Rubi, J. Lecourt, U. L\"uders, F., Gomez-Marlasca, P. Granell, F. Golmar, and P. Levy

TL;DR
This paper demonstrates a manganite-based memristive device with three resistance states, improved performance using current stimuli, and a self-healing feature activated by heating, advancing multi-level memory technology.
Contribution
It introduces a novel three-level resistive switching device with self-healing capability using manganites, and explores current-based stimuli for enhanced performance.
Findings
Three discrete resistance states with high retention and endurance
Current stimuli improve device performance and reveal intermediate states
Self-healing functionality activated by heating up to 120°C
Abstract
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/Mn/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current-voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding s and 70 cycles, respectively. We rationalize our experimental observations by proposing a mixed scenario were a metallic filament and a Si layer coexist, accounting for the observed resistive switching. Overall electrode…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides
